Sb2S3 Solar Cells
نویسندگان
چکیده
منابع مشابه
Toward High‐Efficiency Solution‐Processed Planar Heterojunction Sb2S3 Solar Cells
Low-cost hybrid solar cells have made tremendous steps forward during the past decade owing to the implementation of extremely thin inorganic coatings as absorber layers, typically in combination with organic hole transporters. Using only extremely thin films of these absorbers reduces the requirement of single crystalline high-quality materials and paves the way for low-cost solution processin...
متن کاملAnnealing effect on Sb2S3-TiO2 nanostructures for solar cell applications
Nanostructures composited of vertical rutile TiO2 nanorod arrays and Sb2S3 nanoparticles were prepared on an F:SnO2 conductive glass by hydrothermal method and successive ionic layer adsorption and reaction method at low temperature. Sb2S3-sensitized TiO2 nanorod solar cells were assembled using the Sb2S3-TiO2 nanostructure as the photoanode and a polysulfide solution as an electrolyte. Anneali...
متن کاملEnhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells
We provided a new method to improve the efficiency of Sb₂S₃ thin film solar cells. The TiO₂ electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb₂S₃ solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO₂ films. Compared with the undoped TiO₂, Li-doped mesoporou...
متن کاملSb2S3 grown by ultrasonic spray pyrolysis and its application in a hybrid solar cell
Chemical spray pyrolysis (CSP) is a fast wet-chemical deposition method in which an aerosol is guided by carrier gas onto a hot substrate where the decomposition of the precursor chemicals occurs. The aerosol is produced using an ultrasonic oscillator in a bath of precursor solution and guided by compressed air. The use of the ultrasonic CSP resulted in the growth of homogeneous and well-adhere...
متن کاملPressure-induced electronic topological transition in Sb2S3.
We report the high-pressure vibrational properties and a pressure-induced electronic topological transition in the wide bandgap semiconductor Sb2S3 (E g = 1.7-1.8 eV) using Raman spectroscopy, resistivity and x-ray diffraction (XRD) studies. In this report, high-pressure Raman spectroscopy and resistivity studies of Sb2S3 have been carried out to 22 GPa and 11 GPa, respectively. We observed t...
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ژورنال
عنوان ژورنال: Joule
سال: 2018
ISSN: 2542-4351
DOI: 10.1016/j.joule.2018.04.003